High-electron-mobility transistor

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Science and technology

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What Wikipedia says

A high-electron-mobility transistor (HEMT or HEM FET), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of a doped region (as is generally the case for a MOSFET).

Excerpt from the Wikipedia article “High-electron-mobility transistor”, under the CC BY-SA 4.0 license. Read the article on Wikipedia

Image: High_Electron_MobilityTransistor_-_electron_energy_band_structure_(DE).svg: Cepheiden derivative work: sfu (talk), CC BY-SA 3.0, via Wikimedia Commons.